
Explore the planar fabrication process for integrated circuits, covering wafer preparation, epitaxial growth, oxidation, photolithography, diffusion, ion implantation, isolation, metallization, assembly, and packaging.
Explore the metallization process for CMOS VLSI interconnections, detailing aluminum thin films deposited by vacuum evaporation and electron-beam heating, their conduction properties, thickness, and subsequent testing and packaging.
Explore how a p-substrate NMOS forms a gate-controlled channel that allows electrons to flow from source to drain. Analyze transit time, non-saturated and saturated regions, pinch-off, and gate-oxide capacitor behavior.
Explain Ids–Vds behavior: in the linear region Ids rises with Vds until Vds reaches Vgs−Vt, then pinch-off fixes Ids in saturation; compare enhancement and depletion mode MOSFETs.
Calculate the pull-up to pull-down ratio for a depletion-mode pull-up NMOS driving an enhancement-mode pull-down NMOS in two cascaded inverters, yielding a 4:1 ratio.
Explore alternative pull-up forms in CMOS VLSI design, including resistor pull-up, depletion-mode and enhancement-mode transistors, and CMOS inverter configurations. Assess output behavior and trade-offs in power, space, and fabrication.
explore alternative pull-up forms in cmos vlsi, comparing nmos pull-ups and cmos inverters. analyze on/off states, open circuits, and how cmos achieves full 0 to vdd swings with low power.
Analyze the CMOS inverter voltage transfer characteristics, detailing how NMOS and PMOS switch to produce v_out from v_in. Explore cutoff, linear, and saturation regions and the switching threshold.
Explain how depletion‑mode transistors realize not, nor, and or gates in cmos vlsi design, detailing input conditions, on/off states, and the resulting outputs for nand and not/nor configurations.
Explore the CMOS NOR operation by analyzing pull-up and pull-down networks, deriving the output expression, and illustrating a stick diagram with pmos and nmos transistors.
Explore implementing a cmos nor layout from a stick diagram, detailing pull-up and pull-down transistors, polysilicon gates, and metal routing with substrate and lambda contacts.
Analyze the charge and discharge delays in a two-inverter pair using NMOS, including load capacitance, pull-up and pull-down resistances, and the impact of depletion and enhancement devices on total delay.
Estimate cmos inverter rise and fall delays by modeling the transistor as a saturated current source charging a load capacitor, deriving both rise and fall times.
Explore how cascading inverters affects total time delay for even and odd numbers of stages, including transitions and the role of load and gate capacitances.
Explore how super buffers reduce the asymmetric charging and discharging delays in cascaded inverters, offering faster, more balanced timing than conventional inverters in CMOS VLSI design.
Examine how inverting super buffers use depletion and enhancement mode transistors to charge a capacitor, producing zero volts output at five volts input and five volts at zero volts.
Design a one-bit parity generator cell for CMOS VLSI, using aa and a bar with previous parity pi minus one and pi minus one bar, and its truth table.
Master the priority based bus arbitration logic with n-bit BAL design, its truth table, logic expressions, and stick diagrams, including input-output flow, select signals, and transistor-level insights.
This lecture presents the design of a 4-bit ripple carry adder in cmos vlsi, deriving sum and carry expressions from truth tables and implementing with logic gates or two-to-one multiplexers.
The lecture analyzes ripple carry adder delay, introduces carry generate and carry propagate concepts, and describes carry look-ahead precomputation to reduce propagation delay.
Learn how to master on VLSI system Design & SubSystems of Digital Circuits and designing of different circuits like combinational and sequential etc. In this course you will learn very large scale integration design course from scratch and also covered each and every details with step by step procedure. Now a days very large scale integration technology emerging or growing day by day. You cannot imagine without the Basic VLSI Design & SubSystems of Digital Circuits or even electronics and integrated circuits because usage of electronic gadgets now becoming a part in our daily routines. So we much depend on VLSI system Design & SubSystems of Digital Circuits to design like portable electronic gadgets and other gadgets for different purposes. The silicon-integrated circuitry make it possible to design of digital circuits which may be very complex and most economical in space, power requirements and cost, and potentially very fast The area, power and cost have made silicon the dominant fabrication technology for electronics in very wide ranging areas of application. Like digital signal processing, analog and digital communications as well as in video processing etc. Metal oxide semiconductor (MOS) related circuitry will meet requirements but still it is being researched by ongoing improvements and the research in fabrication such that other techniques are being majorly adapted with gallium arsenide technology, including the use of materials other than silicon for the production of integrated circuits. . So its needed to learn VLSI system Design & SubSystems of Digital Circuits for better growth particularly for electronics and computer related people. So those who want to settle in VLSI design field learning these concepts is essential .so start your journey with this course from now onwards.
In this course you may learn the behavior of MOS circuits in detail manner as well as you could get the better understanding after completion of this course.
The course covers these topics
Basic Electrical Properties of metal oxide semiconductor(MOS) and Bipolar and metal oxide semiconductor circuits
Current and voltage relationship and its characteristics
The Non-saturated region
Saturated region
Metal oxide semiconductor transistor transconductance and output conductance relationship.
The pass transistor
Inverter characteristics
Determination of pull up to pull down ration for an NMOS driven by another NMOS inverter.
Pull up to pull down ratio for an NMOS Inverter driven by another NMOS inverter using the pass transistor.
Complementary metal oxide semiconductor as inverter and its characteristics
Transconductance and output conductance
Alternative forms of pull ups
Bipolar and Complementary metal oxide semiconductor inverter circuits.
MOS layers and NMOS color encoding with STICK AND mask layout schemes
MOS layers and CMOS color encoding with STICK and mask layout schemes
Stick diagram rule set
Nmos inverter schematic and stick diagram
NAND schematic and stick diagrams
Operation of not nor or gates
Stick diagram for NOR and OR gate
Cmos inverter schematic and stick diagram
CMOS NAND schematic and stick diagram
CMOS NAND twisted stick diagram and other modified models of sticks for NAND.
CMOS NAND operation.
CMOS NOR operation and stick diagram
Why design rules needed?
lambda based layout rules
CMOS inverter and CMOS- NAND layouts
CMOS- NOR layout
Sheet resistance
Sheet resistance applied to Mos transistors
Sheet resistance for depletion mode MOS inverter
Sheet resistance for CMOS inverter
Area capacitance of layers and standard capacitance in different technologies
Some area capacitances
Multil layer area capacitance
Time delay in MOS circuits
Inverter pair delay using NMOS
CMOS inverter pair delay
Rise time estimation delay
Fall time estimation dealy and relation b/w rise and fall time
Driving of large capacitive loads
Cascaded of inverter for N-even and odd conditions
Condition of pair delay to cascaded inverters for NMOS
Condition of pair delay for CMOS cascaded inverter
What is Super buffers ?
Super buffers in inverting mode & non inverting mode
What is scaling & Scaling for device parameters
Parity generator and its block diagram &Parity generator iin one-bit cell
Implementation of Parity generator with Nmos and CMOS along with stick diagram
What is Bus Arbitration logic and types of Bus arbitration logic?
Bus arbitration logic ,truth table,logic expression,stick diagram, n-bit BAL
Design of Multiplexers 2:1 and 4:1 with schematic and stick diagram
Design of 4 bit adder (Ripple carry adder)
design of 4 bit adder (Ripple carry adder)
Design of carry look ahead adder with CMOS schematic diagram-part2
Feel free to ask any doubt while learning the course
Happy learning!
Skill Gems Education
PUDI V V S NARAYANA