Analog Electronic Lab Based Course on MOSFETs using MULTISIM

Explore the internal structure of mosfets: n-channel with p-substrate and n+ source/drain regions and diffused channel, gate insulator sio2; and p-channel with n-substrate and p+-regions.

Describe structure of n-channel and p-channel mosfets, highlighting absence of a diffused channel in emosfets and that source and drain are not internally connected, with the gate insulated by SiO2.

Explore the symbol of D-MOSFETs, covering N-channel and P-channel forms, and how a diffused channel internally connects source and drain with gate insulation and body terminals.

Learn the symbols for enhancement-type n-channel and p-channel mosfets, including the gate oxide, body substrate, and the fact that source and drain are not internally connected.

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Understand the working of a dmosfet at vgs = 0, focusing on drain–source and transfer characteristics, gate current near zero, and how saturation current ids emerges with rising vds.

Explore how a d-mosfet behaves when vgs is negative, revealing depletion layer growth, reduced electrons in the n-channel, and a decreasing drain current that reaches pinch-off.

Explore how increasing gate-to-source voltage attracts electrons into the n-channel, raising the drain current, and distinguish depletion mode versus enhancement mode in a dmosfet.

explain similarities and differences between the n-channel jfet and the depletion-mode mosfet, derive the drain current using shockley's equation, and compare their drain-source and transfer characteristics.

Study the working of an enhancement-type mOSFET at vgs around 0 v, where the SiO2 insulator yields near zero gate current and no drain-source channel forms, making ID zero.

Explain how a mosfet operates with negative gate-to-source voltage, forming a p channel between drain and source and driving the drain-to-source current to zero as VDS changes.

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Explore how positive vgs creates an n-channel in an mOSFET, revealing transfer characteristics and the threshold voltage. Understand how increasing vds demonstrates enhancement-type mosfet operation.

Explore the drain-source characteristics of a n-channel mosfet, showing how ID varies with VDS for different VGS, including linear and saturation regions and the overdrive concept.

Explore the drain current equation for an n-channel mosfet, covering cutoff, linear and saturation regions, including transfer characteristics. Learn kn = kn' (W/L) and kn' = mu_n Cox.

Analyze mosfet operation across cut-off, linear, and saturation regions using drain-source and transfer characteristics, with the threshold voltage concept and a practical example showing zero vgs leads to cut-off.

Determine the operating region of the N-channel MOSFET using a 0.4 V threshold. Compute vgs and vds and apply Id = kn (Vgs - Vth)^2 in saturation.

Compute Vgs from VG and VZ to 1.0 V, compare with Vt around 0.4 V, and confirm the device is not in cutoff. Then, with Vds = 0, identify the linear region and note the MOSFET current equation discussed.

Evaluate mosfet operating region by calculating Vgs, Vth, and Vds; conclude the device operates in the linear region, applying the triode formula Id = Kn[2(Vgs−Vth)Vds−Vds^2].

Analyze the mosfet's operating region by noting gate and drain are shorted, giving vgs = 0 and zero drain-to-source current; the device operates in the cutoff region.

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Explore the working of p-channel mosfet, focusing on construction, terminals (drain, gate, source), and the transfer and drain characteristics with negative gate bias and hole conduction.

Operate a p-channel mosfet in cutoff, linear, and saturation regions using vsg and modulus of vt, and apply the same current equations as for n-channel devices.

Explore n-channel and p-channel mosfets, their symbols, and gate, drain, and source voltages; understand how vgs determines on-state and how load and source potentials interact.

Assess how a p-channel mosfet operates in cut-off, linear, and saturation by applying region conditions to a numerical example with v = -0.4 v, highlighting Vsg, Vsd, and Vg relationships.

Identify a p-channel MOSFET by its arrow, and determine its region of operation (saturation, cutoff, or linear) using VSG and gate and source voltages.

Solve the third numerical to determine the region of a p-channel MOSFET in an analog lab using Multisim by evaluating VSG, VSD, and the threshold, concluding the saturation region.

Explore how n-channel MOSFETs use threshold voltage values from datasheets—min, max, and typical—and how temperature affects Vth, with transfer curves and Multisim plotting.

Plot the transfer characteristics of an n-channel mosfet in multisim to identify threshold voltage and its temperature dependence between 25 and 175 degree Celsius using IRF540 and IRFZ44N.

Plot the drain-source characteristics of an N-channel mosfet in Multisim, highlighting linear and saturation regions. Label vds and vgs, and note the threshold around 2.474 v for the 2n7000.

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Operate an n-channel mosfet as a switch in Multisim using the 2N7000, exploring threshold voltage, gate-to-source voltage, and on/off (cutoff and saturation) behavior with an led and resistor.