Device engineers and physicists use the Semiconductor Module of COMSOL Multiphysics to design, simulate, and understand semiconductor devices. Multiphysics effects often play an important role in semiconductor devices, and COMSOL Multiphysics is the ideal platform for investigating these effects. COMSOL Multiphysics has a lot of tools that make work with software easier.  In this course, we will learn to simulate the stationary and dynamic performance of semiconductor devices in one, two, and three dimensions, with circuit-based modeling of active and passive devices. To model a Semiconductor device, the geometry is first explained in the course. Then appropriate materials for the Semiconductor interface are described. The dopant distribution can be computed separately using a diffusion equation calculation. Initial conditions and boundary conditions have strong effects on the solution and will be defined in the course. Next, the mesh is defined and a solver is selected. Finally, the results are visualized using a wide range of plotting and evaluation tools.  After the description of basic tools, we will design some electronic components with COMSOL Multiphysics. Electronic devices such as p-n junction diode, Bipolar junction transistor(BJT), metal-oxide-semiconductor FET (MOSFET), MESFET, erasable programmable read only memory (EEPROM,) etc. Also, monthly new examples will be added to this course.