COMSOL Multiphysics for Electronic Engineers

Explore COMSOL Multiphysics tools, from the Model Wizard to parameters, variables, and geometry nodes, to define input voltage or current and model shapes before focusing on electronic and semiconductor interface.

Learn how to install Comsol by downloading the link, selecting language, accepting terms, locating the license file, installing all modules, and running the server workaround to access the software.

Use the model wizard to set up a 2d semiconductor model. The semiconductor interface solves Poisson's equation and the drift-diffusion equations for electrons and holes, with a stationary study.

Learn to define and use parameters for geometry, mesh, and sweeps, and create global or local variables from solution and dependent variables in COMSOL, including Poisson and drift-diffusion semiconductor examples.

Define device geometry in comsol by creating shapes like rectangles, circles, and ellipses, set origin and rotation, and use sketch tools for polygons and arcs with micrometer precision.

Explore union, intersection, and difference of two circles to build and modify geometry, then convert curves to solids (and back) and use mesh control edges to create localized refinement.

Explore solving the Poisson equation and drift-diffusion equations for electrons and holes in a 2d semiconductor, with Maxwell-Boltzmann or Fermi-Dirac statistics and quasi Fermi levels.

Master semiconductor material models in COMSOL by setting physical and transport properties, including band gap narrowing, Poisson, current, and continuity equations, and adjusting mobility models.

Apply analytic and geometric doping in COMSOL to define donor and acceptor regions, configure domain selections, and model p-type to n-type decay with Gaussian and box profiles.

Investigate generation and recombination mechanisms in semiconductors, including direct recombination, trap-assisted (Shockley–Read–Hall), Auger, and impact ionization, with material parameters and defining equations.

Learn how COMSOL automatically adds semiconductor boundary conditions, including metal contacts (ohmic and Schottky) with recombination velocity and Richardson constants, plus thin insulator gates for mosfets.

Explore meshing operations in COMSOL, including free triangular, free quad, mapped, and edge meshes, with attribute nodes like size and distribution to refine boundaries and domains in semiconductor geometries.

Simulate a 2d p-n diode in comsol by defining geometry, doping, and traps, then apply a bias voltage VD with metal contacts. Run a stationary auxiliary sweep from 0 to 2 V to obtain the current–voltage curve.

COMSOL Multiphysics for engineers demonstrates plotting the current–voltage curve, identifying a diode threshold near 0.7, and visualizing net doping, electric potential, and bias effects with 1d and 2d plots.