An Entry-Level Course on Analog and Digital Microelectronics

Name: An Entry-Level Course on Analog and Digital Microelectronics
Rating: 4.6 (24 reviews)

A Crash Course on Basics of CMOS Microelectronics: Design, Simulation, and Layout

Highest Rated

Created byProfessor Payam Heydari

Last updated 7/2023

English

What you'll learn

This course offers an insightful learning of fundamentals of analog and digital circuits in 15 sessions each around 40-45 minutes
The course delivers the course material efficiently in 15 sessions each taking 40 -45 minutes
The course intends to provide a bridge from academics to a job in semiconductor industry by sharing important design knowledge from analysis to layout.
At the end of the course, the students will develop basic but necessary knowledge of CMOS digital and analog circuits.

Course content

17 sections • 21 lectures • 17h 21m total length

Introduction3:17
An Intuitive Understanding of Structure of a MOS Device
MOS Device in Strong Inversion
Triode Region of Operation
Saturation region of Operation
Analysis, Simulation, and Layout of CMOS Single-Stage Amplifiers
Common-Source
Common-Gate
Cascode
Analysis, Simulation, and Layout of Digital CMOS Inverter
Transfer Characteristics
Noise Margin
Propagation Delay
Analysis, Simulation, and Layout of CMOS Combinational Logic Circuits
NAND
NOR
XOR
A Boolean Logic Function

Basics of Digital and Analog Design29:54
- Distinction between analog vs. digital signals and systems
- Building a step-by-step foundation for MOS device
- Digital integrated circuit design versus integrated circuit design
- Challenges in integrated circuits (IC) design
- An overview of the design process in metal-oxide semiconductor (MOS) technology
- Starting the fundamentals of MOS structure
Moore's Law and Basics of MOS Transistor51:08
- Presenting Moore's Law
- Introducing the MOSFET device as the core block in an amplifier
- Introducing the polysilicon layer, the gate oxide, drain and source diffusion, and the substrate bulk.

Physics of an MOS Transistor48:57
- Introducing the structure of a MOS device
- Studying the basic structure of a MOS device
- Description of conducting channel within the MOS device
- Discussion about the formation of conductive channel in a MOS transistor
- Understanding the threshold voltage in a MOS transistor
- MOS transistor operation when the gate-source voltage increases above the threshold voltage
- An Overview of MOS transistor on its on-state when the drain-source voltage increases

Study of MOS Transistor in Strong Inversion (Triode and Saturation)41:06
- Understanding the threshold voltage in a MOS transistor
- MOS transistor operation when the gate-source voltage increases above the threshold voltage
- An Overview of MOS transistor on its on-state when the drain-source voltage increases
- Description of MOSFET as a voltage-controlled resistor in the triode region
- Study of MOSFET as a voltage-controlled current source in the saturation region
- Understanding the pinch-off phenomenon
- MOS transistor operating in the triode region
- MOS transistor operating in the saturation region

Lecture 10 - Layout, Simulation of CMOS Inverter - Common-Source Amplifier41:52
- Learning the layout of a static CMOS inverter
- Transient simulation of a static CMOS inverter
- Fundamentals of MOS common-source amplifier
Analysis of Common-Source (CS) Amplifier and Source-Degenerated CS Amplifier1:01:35
- Current mirroring in CMOS amplifiers
- Introducing common-source amplifier
- Derivation of voltage gain in common-source amplifiers
- Introducing common-source amplifier with active load and its gain analysis
- MOS common-source amplifier with resistive source degeneration
- Linearity improvement in a common-source amplifier with resistive source degeneration

Requirements

The requirement for this course is the knowledge of basic network/circuit theory and elementary semiconductor physics

Description

With the new investments in semiconductors and chips by both the government and private sector, there will be an incredible need for design engineers who can participate in this vibrant job market. This course will address this real demand by offering an insightful understanding of the basics of analog and digital electronics. The course is comprised of sixteen sessions, each taking around 40-45 minutes. It covers the design, simulation, and layout of metal-oxide-semiconductor (MOS) transistors, basic analog amplifiers, and basic digital logic circuits in an efficient presentation setting. The course provides a step-by-step analysis and design of (1) widely used analog amplifiers including common-source, common-gate, source follower, and cascode stages as well as an analysis of gain and input/output impedances, and (2) logic circuits including CMOS inverters, NAND, NOR, and general Boolean functions as well as introduction to performance parameters such as noise margin and propagation delay. For each circuit being covered, the design tips and the layout will be provided. All the concepts will be clarified by many examples. The course is intended for junior- and senior-level students in the field of electrical and computer engineering, (2) engineers in other engineering fields who are interested in gaining knowledge of microelectronics, (3) graduate students from different engineering fields who are interested in learning about semiconductor devices and circuits.

Who this course is for:

This course is intended for junior- and senior-level undergraduate students, electrical engineers who consider pursuing a job in a growing semiconductor market, and graduate-level engineering students who are interested in a hands-on knowledge of microelectronic circuits

An Entry-Level Course on Analog and Digital Microelectronics

What you'll learn

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Course content

Introduction1 lecture • 3min

Section 2 - Overview of Semiconductor Technology; Integrated Circuit Design1 lecture • 32min

Section 3 - Basics of Digital and Analog Design2 lectures • 1hr 21min

Section 4 -Physics of an MOS Transistor1 lecture • 49min

Section 5 - Study of MOS Transistor in Strong Inversion (Triode and Saturation)1 lecture • 41min

Section 6 - MOSFET in Saturation - Body Effect and Channel-Length Modulation1 lecture • 55min

Section 7 - Biasing in MOS Amplifiers1 lecture • 42min

Section 8 - Biasing in MOS Amplifier and Large-Signal Behavior of CMOS Inverter1 lecture • 42min

Layout, Simulation of CMOS Inverter AND Study of Common-Source Amplifier2 lectures • 1hr 43min

CMOS Inverter Layout & Study of Source-Degenerated Comm-Source Amplifier1 lecture • 49min

Requirements

Description

Who this course is for: